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| 4N60 4 Amps600Volts N-Channel MOSFET Description The ET4N60 N-Channel enhancement mode silicon gate designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. power MOSFET is Features RDS(ON) =2.50 @VGS = 10 V Low gate charge ( typical 16nC) High ruggedness Fast switching capability Avalanche energy specified Improved dv/dt capability Symbol Absolute Maximum Ratings(Tc=25,unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Drain Currenet Continuous Drain Current Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation Tc=25 Derate above 25 Repetitive Single Pulse Tc=25 Tc=100 (Note 1) (Note 1) (Note 2) (Note 3) IDP EAR EAS dv/dt PD 104 0.83 Symbol TO-220 VDSS VGSS ID Ratings TO-220F 600 30 TO-252 V V 2.8 1.8 11.2 4.9 210 4.5 34 0.27 49 0.39 A A A mJ mJ V/ns W W/ Units 4.0 2.4 16 10.4 180 4.0 2.4 16 1 BEIJING ESTEK ELECTRONICS CO.,LTD 4N60 Junction Temperature Storage Temperature TJ TSTG +150 -55~+150 Drain current limited by maximum junction temperature. Thermal Characteristics Parameter Thermal Resistance Junction-Ambient Symbol TO-220 RthJA RthCS RthJC 0.5 1.2 62.5 -3.65 Ratings TO-220F TO-252 50 110 -2.56 /W Units Thermal Resistance, Case-to-Sink Typ. Thermal Resistance Junction-Case Electrical CharacteristicsTJ=25,unless Otherwise specified. Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Forward BVDSS IDSS VGS=0V,ID=250A VDS=600V,VGS=0V VDS=480V,TC=125 IGSS BVDSS/TJ VGS=30V,VDS=0V VGS=-30V,VDS=0V ID=250A 600 ----------0.7 -1 10 100 -100 -V A A nA nA V/ Symbol Test Conditions Min Typ Max Units Reverse Breakdown Voltage Temperature Coefficient On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage Continuous Drain-Source Current VSD VGS=0V ISD=4.0A(TO220,TO220F) ISD=2.8A(TO252) TO-220,TO-220F TO-252 Pulsed Drain-Source Current Reverse Recovery Time ISM tRR TO-220,TO-220F TO-252 ISD=4.0A, dISD/dt=100A/s --1.4 V tD(ON) tR tD(OFF) tF QG QGS QGD VDD=300V, ID=4.0A(TO220,TO220F) ID=2.8A(TO252) RG=25 (Note 4, 5) VGS(TH) RDS(ON) VDS=VGS, ID=250A VDS=10V, ID=2.0A(TO220,TO220F) ID=1.4A(TO252) 2.0 -- -2.0 4.0 2.5 V CISS COSS CRSS VDS=25V,VGS=0V, f=1MHZ ---- 560 55 7 ---- pF pF pF -------- 10 40 40 50 16 2.5 6.5 -------- ns ns ns ns nC nC nC VDS=480V, ID=4.0A(TO220,TO220F) ID=2.8A(TO252) VGS=10V (Note 4, 5) ISD ------- ----300 2.0 4.0 2.8 16.0 11.2 --- A A ns C Reverse Recovery Charge QRR (Note 4) 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 20 mH, IAS = 4.0 A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 4.0 A, di/dt 200A/s, VDDBVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature 2 BEIJING ESTEK ELECTRONICS CO.,LTD 4N60 Typical Characteristics 3 BEIJING ESTEK ELECTRONICS CO.,LTD 4N60 Typical Characteristics (Continued) Figure 9-1. Maximum Safe Operating Area for TO220 Figure 9-2. Maximum Safe Operating Area for TO220F TO220,TO220F TO251,TO252 Figure 9-3. Maximum Safe Operating Area for TO251, TO252 Figure 10. Maximum Drain Current vs Case Temperature 4 BEIJING ESTEK ELECTRONICS CO.,LTD 4N60 Typical Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve TO220 Figure 11-2. Transient Thermal Response Curve for TO220F Figure 11-3. Transient Thermal Response Curve for TO252 5 BEIJING ESTEK ELECTRONICS CO.,LTD |
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